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	Study of high breakdown voltage GaN-based current-aperture vertical electron transistor with source-connected field-plates for power applications
	Wang, Haiyong; Mao, Wei; Cong, Guanyu; Wang, Xiaofei; Du, Ming; Zheng, Xuefeng; Wang, Chong; Zhang, Jincheng; Hao, Yue
刊名	SEMICONDUCTOR SCIENCE AND TECHNOLOGY
	2018
卷号	33
关键词	source-connected field-plates breakdown voltage specific on-resistance GaN-based CAVET power device
ISSN号	0268-1242
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2832054
专题	西安交通大学
推荐引用方式 GB/T 7714	Wang, Haiyong,Mao, Wei,Cong, Guanyu,et al. Study of high breakdown voltage GaN-based current-aperture vertical electron transistor with source-connected field-plates for power applications[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2018,33.
APA	Wang, Haiyong.,Mao, Wei.,Cong, Guanyu.,Wang, Xiaofei.,Du, Ming.,...&Hao, Yue.(2018).Study of high breakdown voltage GaN-based current-aperture vertical electron transistor with source-connected field-plates for power applications.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,33.
MLA	Wang, Haiyong,et al."Study of high breakdown voltage GaN-based current-aperture vertical electron transistor with source-connected field-plates for power applications".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 33(2018).

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