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	Low specific on-resistance GaN-based vertical heterostructure field effect transistors with nonuniform doping superjunctions
	Mao, Wei; Wang, Hai-Yong; Shi, Peng-Hao; Wang, Xiao-Fei; Du, Ming; Zheng, Xue-Feng; Wang, Chong; Ma, Xiao-Hua; Zhang, Jin-Cheng; Hao, Yue
刊名	CHINESE PHYSICS B
	2018
卷号	27
关键词	breakdown voltage nonuniform doping superjunctions GaN-based vertical HFETs minimized specific on-resistance
ISSN号	1674-1056
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2831371
专题	西安交通大学
推荐引用方式 GB/T 7714	Mao, Wei,Wang, Hai-Yong,Shi, Peng-Hao,et al. Low specific on-resistance GaN-based vertical heterostructure field effect transistors with nonuniform doping superjunctions[J]. CHINESE PHYSICS B,2018,27.
APA	Mao, Wei.,Wang, Hai-Yong.,Shi, Peng-Hao.,Wang, Xiao-Fei.,Du, Ming.,...&Hao, Yue.(2018).Low specific on-resistance GaN-based vertical heterostructure field effect transistors with nonuniform doping superjunctions.CHINESE PHYSICS B,27.
MLA	Mao, Wei,et al."Low specific on-resistance GaN-based vertical heterostructure field effect transistors with nonuniform doping superjunctions".CHINESE PHYSICS B 27(2018).

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