| In situ Condition Monitoring of IGBT Based on Miller Plateau Duration | |
| Liu, Jingcun; Zhang, Guogang; Chen, Qian; Qi, Lu; Geng, Yingsan; Wang, Jianhua | |
| 刊名 | IEEE Transactions on Power Electronics
 |
| 2019 | |
| 卷号 | 34页码:769-782 |
| 关键词 | Accelerated aging test Closed-form expression Gate oxide degradation High electric field stress Multiple failure mechanisms On line measurement system Online condition monitoring Semiconductor device reliability |
| ISSN号 | 0885-8993 |
| URL标识 | 查看原文 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/2829056 |
| 专题 | 西安交通大学 |
| 推荐引用方式 GB/T 7714 | Liu, Jingcun,Zhang, Guogang,Chen, Qian,et al. In situ Condition Monitoring of IGBT Based on Miller Plateau Duration[J]. IEEE Transactions on Power Electronics,2019,34:769-782. |
| APA | Liu, Jingcun,Zhang, Guogang,Chen, Qian,Qi, Lu,Geng, Yingsan,&Wang, Jianhua.(2019).In situ Condition Monitoring of IGBT Based on Miller Plateau Duration.IEEE Transactions on Power Electronics,34,769-782. |
| MLA | Liu, Jingcun,et al."In situ Condition Monitoring of IGBT Based on Miller Plateau Duration".IEEE Transactions on Power Electronics 34(2019):769-782. |
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