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	Auxiliary structure of nano-pinnacle prepared on silicon substrate: Improving the emission intensity by 9 times in SSI-LEDs
	Liu, Lingguang; Wang, Yaogong; Lin, Yuanyuan; Zhang, Xiaoning; Kuo, Yue; Tian, Jinshou
刊名	MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
	2019
卷号	93页码:226-230
关键词	Dielectric breakdown Conductive paths Solid-state incandescent LED Nano-pinnacle Broadband light
ISSN号	1369-8001
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2828190
专题	西安交通大学
推荐引用方式 GB/T 7714	Liu, Lingguang,Wang, Yaogong,Lin, Yuanyuan,et al. Auxiliary structure of nano-pinnacle prepared on silicon substrate: Improving the emission intensity by 9 times in SSI-LEDs[J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2019,93:226-230.
APA	Liu, Lingguang,Wang, Yaogong,Lin, Yuanyuan,Zhang, Xiaoning,Kuo, Yue,&Tian, Jinshou.(2019).Auxiliary structure of nano-pinnacle prepared on silicon substrate: Improving the emission intensity by 9 times in SSI-LEDs.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,93,226-230.
MLA	Liu, Lingguang,et al."Auxiliary structure of nano-pinnacle prepared on silicon substrate: Improving the emission intensity by 9 times in SSI-LEDs".MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 93(2019):226-230.

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