Large tunneling magnetoresistance in magnetic tunneling junctions based on two-dimensional CrX 3 (X = Br, I) monolayers

	Large tunneling magnetoresistance in magnetic tunneling junctions based on two-dimensional CrX 3 (X = Br, I) monolayers
	Longfei Pan; Le Huang; Mianzeng Zhong; Xiang-Wei Jiang; Hui-Xiong Deng; Jingbo Li; Jian-Bai Xia ; Zhongming Wei
刊名	NANOSCALE
	2018
卷号	10 期号:47 页码:22196-22202
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/29204]
专题	半导体研究所_半导体超晶格国家重点实验室
推荐引用方式 GB/T 7714	Longfei Pan; Le Huang; Mianzeng Zhong; Xiang-Wei Jiang; Hui-Xiong Deng; Jingbo Li; Jian-Bai Xia ; Zhongming Wei. Large tunneling magnetoresistance in magnetic tunneling junctions based on two-dimensional CrX 3 (X = Br, I) monolayers[J]. NANOSCALE,2018,10(47):22196-22202.
APA	Longfei Pan; Le Huang; Mianzeng Zhong; Xiang-Wei Jiang; Hui-Xiong Deng; Jingbo Li; Jian-Bai Xia ; Zhongming Wei.(2018).Large tunneling magnetoresistance in magnetic tunneling junctions based on two-dimensional CrX 3 (X = Br, I) monolayers.NANOSCALE,10(47),22196-22202.
MLA	Longfei Pan; Le Huang; Mianzeng Zhong; Xiang-Wei Jiang; Hui-Xiong Deng; Jingbo Li; Jian-Bai Xia ; Zhongming Wei."Large tunneling magnetoresistance in magnetic tunneling junctions based on two-dimensional CrX 3 (X = Br, I) monolayers".NANOSCALE 10.47(2018):22196-22202.