Monolithic integration of InGaAs/InP multiple quantum wells on SOI substrates for photonic devices

	Monolithic integration of InGaAs/InP multiple quantum wells on SOI substrates for photonic devices
	Zhibo Li; Mengqi Wang; Xin Fang; Yajie Li; Xuliang Zhou; Hongyan Yu; Pengfei Wang; Wei Wang; Jiaoqing Pan
刊名	JOURNAL OF APPLIED PHYSICS
	2018
卷号	123 期号:5 页码:053102
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/29145]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Zhibo Li; Mengqi Wang; Xin Fang; Yajie Li; Xuliang Zhou; Hongyan Yu; Pengfei Wang; Wei Wang; Jiaoqing Pan. Monolithic integration of InGaAs/InP multiple quantum wells on SOI substrates for photonic devices[J]. JOURNAL OF APPLIED PHYSICS,2018,123(5):053102.
APA	Zhibo Li; Mengqi Wang; Xin Fang; Yajie Li; Xuliang Zhou; Hongyan Yu; Pengfei Wang; Wei Wang; Jiaoqing Pan.(2018).Monolithic integration of InGaAs/InP multiple quantum wells on SOI substrates for photonic devices.JOURNAL OF APPLIED PHYSICS,123(5),053102.
MLA	Zhibo Li; Mengqi Wang; Xin Fang; Yajie Li; Xuliang Zhou; Hongyan Yu; Pengfei Wang; Wei Wang; Jiaoqing Pan."Monolithic integration of InGaAs/InP multiple quantum wells on SOI substrates for photonic devices".JOURNAL OF APPLIED PHYSICS 123.5(2018):053102.