An all-carbon vdW heterojunction composed of penta-graphene and   graphene: Tuning the Schottky barrier by electrostatic gating or   nitrogen doping

doi:10.1063/1.4986604

CORC > 北京大学 > 工学院

	An all-carbon vdW heterojunction composed of penta-graphene and graphene: Tuning the Schottky barrier by electrostatic gating or nitrogen doping
	Guo, Yaguang ; Wang, Fancy Qian ; Wang, Qian
刊名	APPLIED PHYSICS LETTERS
	2017
关键词	AUGMENTED-WAVE METHOD TRANSISTORS HETEROSTRUCTURES ELECTRONICS FILMS
DOI	10.1063/1.4986604
英文摘要	The non-zero band gap together with other unique properties endows penta-graphene with potential for device applications. Here, we study the performance of penta-graphene as the channel material contacting with graphene to form a van der Waals heterostructure. Based on first-principles calculations, we show that the intrinsic properties of penta-graphene are preserved in the heterojunction, which is different from the conventional contact with metal surfaces. The stacked system forms an n-type Schottky barrier (Phi(e)) at the vertical interface, while a negative band bending occurs at the lateral interface in a current-in-plane model. From the device point of view, we further demonstrate that a low-Phi(e) or an Ohmic contact can be realized by applying an external electric field or doping graphene with nitrogen atoms. This allows the control of the Schottky barrier height, which is essential in fabricating penta-graphene-based nanotransistors. Published by AIP Publishing.; National Natural Science Foundation of China [NSFC-51471004]; National Key Research and Development Program of China [2016YFE0127300]; SCI(E); ARTICLE; 7; 111
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/471498]
专题	工学院
推荐引用方式 GB/T 7714	Guo, Yaguang,Wang, Fancy Qian,Wang, Qian. An all-carbon vdW heterojunction composed of penta-graphene and graphene: Tuning the Schottky barrier by electrostatic gating or nitrogen doping[J]. APPLIED PHYSICS LETTERS,2017.
APA	Guo, Yaguang,Wang, Fancy Qian,&Wang, Qian.(2017).An all-carbon vdW heterojunction composed of penta-graphene and graphene: Tuning the Schottky barrier by electrostatic gating or nitrogen doping.APPLIED PHYSICS LETTERS.
MLA	Guo, Yaguang,et al."An all-carbon vdW heterojunction composed of penta-graphene and graphene: Tuning the Schottky barrier by electrostatic gating or nitrogen doping".APPLIED PHYSICS LETTERS (2017).