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	TOP METAL LAYER ELECTRO PLATING EDGE BEVEL REMOVAL IMPROVEMENT STUDY
	Liu, Jianqiang ; Wu, Hanming ; Zhang, Xing ; Wang, Yi ; Tian, Chao ; Sun, Liang
	2016
英文摘要	Copper has been recognized as a more suitable interconnects material than aluminum because of its low electrical resistivity and excellent electromigration resistance. Nowadays, inter connect copper is realized by electroplating (ECP). and the ECP process consists of three steps: copper plating, edge bevel removal (EBR) and copper anneal. EBR is a process that using sulfuric acid and hydrogen peroxide to remove the edge and back side metal layer. In the 55nm tech node, EBR width in top metal layer ECP is key to the chip manufacturing, since wider EBR may not only affect the yield of chips located in wafer edge, but also lead to wafer ID miss-auto read issue. Generally, EBR consists of two steps of acid clean, the effectiveness is determined by the step 11 etchant volume, etchant flow rate, wafer rotating speed and the step 2 etchant volume, etchant flow rate, wafer rotating speed. In this paper, we studied the relationship of the mean value, standard deviation (STD) of EBR width and the parameters mentioned above. By modifying the etchant volume, etchant flow rate, wafer rotating speed of the two steps. there are total 16 split conditions in this paper. From the study, we get the conclusion that increasing step 1 and step 2 wafer rotating speeds will decrease the EBR width, which could protect wafer ID from damaging by EBR and improve wafer edge chip yield, thus improve the process reliability of top metal layer ECP.; CPCI-S(ISTP); Berry_Liu@smics.com
语种	英语
出处	China Semiconductor Technology International Conference (CSTIC)
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/450096]
专题	软件与微电子学院
推荐引用方式 GB/T 7714	Liu, Jianqiang,Wu, Hanming,Zhang, Xing,et al. TOP METAL LAYER ELECTRO PLATING EDGE BEVEL REMOVAL IMPROVEMENT STUDY. 2016-01-01.

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