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	Simulation Method for Forming and Switching Processes of NbO_2-based Selector; Simulation Method for Forming and Switching Processes of NbO_2-based Selector
	Junjie Hu ; Yudi Zhao ; Longxiang Yin ; Zhiyuan Lun ; Peng Huang ; Jinfeng Kang ; Xiaoyan Liu
	2016
关键词	switching resistive dimensions thermally probable insulator simulator candidate heating rutile switching resistive dimensions thermally probable insulator simulator candidate heating rutile
英文摘要	NbO_2-based selector with threshold switching characteristics was studied as a probable candidate to address the sneak-path problem in the resistive-switching random access memory(RRAM) arrays. In this work, we simulate the forming and switching process of the selector with consideration of the thermally driven metal-insulator transition and crystallization effects. Based on the simulator, we analyze the influence and optimization of the working conditions and device dimensions on the device characteristics.; NbO_2-based selector with threshold switching characteristics was studied as a probable candidate to address the sneak-path problem in the resistive-switching random access memory(RRAM) arrays. In this work, we simulate the forming and switching process of the selector with consideration of the thermally driven metal-insulator transition and crystallization effects. Based on the simulator, we analyze the influence and optimization of the working conditions and device dimensions on the device characteristic; IEEE Beijing Section; 3
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/479822]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Junjie Hu,Yudi Zhao,Longxiang Yin,et al. Simulation Method for Forming and Switching Processes of NbO_2-based Selector, Simulation Method for Forming and Switching Processes of NbO_2-based Selector. 2016-01-01.

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