Reliability evaluation of high-performance,low-power FinFET standard cells based on mixed RBB/FBB technique

CORC > 北京大学 > 信息科学技术学院

	Reliability evaluation of high-performance,low-power FinFET standard cells based on mixed RBB/FBB technique
	Tian Wang ; Xiaoxin Cui ; Yewen Ni ; Kai Liao ; Nan Liao ; Dunshan Yu ; Xiaole Cui
刊名	Journal of Semiconductors
	2017
关键词	reliability FinFET standard cell low power VLSI
英文摘要	With shrinking transistor feature size,the fin-type field-effect transistor(FinFET) has become the most promising option in low-power circuit design due to its superior capability to suppress leakage.To support the VLSI digital system flow based on logic synthesis,we have designed an optimized high-performance low-power FinFET standard cell library based on employing the mixed FBB/RBB technique in the existing stacked structure of each cell.This paper presents the reliability evaluation of the optimized cel; 04; 55-61
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/479642]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Tian Wang,Xiaoxin Cui,Yewen Ni,et al. Reliability evaluation of high-performance,low-power FinFET standard cells based on mixed RBB/FBB technique[J]. Journal of Semiconductors,2017.
APA	Tian Wang.,Xiaoxin Cui.,Yewen Ni.,Kai Liao.,Nan Liao.,...&Xiaole Cui.(2017).Reliability evaluation of high-performance,low-power FinFET standard cells based on mixed RBB/FBB technique.Journal of Semiconductors.
MLA	Tian Wang,et al."Reliability evaluation of high-performance,low-power FinFET standard cells based on mixed RBB/FBB technique".Journal of Semiconductors (2017).