Direct Observations of Nanofilament Evolution in Switching Processes in   HfO2-Based Resistive Random Access Memory by In Situ TEM Studies

doi:10.1002/adma.201602976

CORC > 北京大学 > 信息科学技术学院

	Direct Observations of Nanofilament Evolution in Switching Processes in HfO2-Based Resistive Random Access Memory by In Situ TEM Studies
	Li, Chao ; Gao, Bin ; Yao, Yuan ; Guan, Xiangxiang ; Shen, Xi ; Wang, Yanguo ; Huang, Peng ; Liu, Lifeng ; Liu, Xiaoyan ; Li, Junjie ; Gu, Changzhi ; Kang, Jinfeng ; Yu, Richeng
刊名	ADVANCED MATERIALS
	2017
关键词	ELECTROLYTE-BASED RERAM CONDUCTIVE FILAMENTS MEMRISTOR RRAM HOLOGRAPHY OPERATIONS RESISTANCE CHANNELS DEVICES MODEL
DOI	10.1002/adma.201602976
英文摘要	Resistive switching processes in HfO2 are studied by electron holography and in situ energy-filtered imaging. The results show that oxygen vacancies are gradually generated in the oxide layer under ramped electrical bias, and finally form several conductive channels connecting the two electrodes. It also shows that the switching process occurs at the top interface of the hafnia layer.; SCI(E); ARTICLE; 10; 29
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/474608]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Li, Chao,Gao, Bin,Yao, Yuan,et al. Direct Observations of Nanofilament Evolution in Switching Processes in HfO2-Based Resistive Random Access Memory by In Situ TEM Studies[J]. ADVANCED MATERIALS,2017.
APA	Li, Chao.,Gao, Bin.,Yao, Yuan.,Guan, Xiangxiang.,Shen, Xi.,...&Yu, Richeng.(2017).Direct Observations of Nanofilament Evolution in Switching Processes in HfO2-Based Resistive Random Access Memory by In Situ TEM Studies.ADVANCED MATERIALS.
MLA	Li, Chao,et al."Direct Observations of Nanofilament Evolution in Switching Processes in HfO2-Based Resistive Random Access Memory by In Situ TEM Studies".ADVANCED MATERIALS (2017).