Experimental Investigation of Ballistic Carrier Transport for Sub-100-nm   Ge n-MOSFETs

doi:10.1109/LED.2017.2674178

CORC > 北京大学 > 信息科学技术学院

	Experimental Investigation of Ballistic Carrier Transport for Sub-100-nm Ge n-MOSFETs
	Cheng, Ran ; Yin, Longxiang ; Wu, Heng ; Yu, Xiao ; Zhang, Yanyan ; Zheng, Zejie ; Wu, Wangran ; Chen, Bing ; Ye, Peide D. ; Liu, Xiaoyan ; Zhao, Yi
刊名	IEEE ELECTRON DEVICE LETTERS
	2017
关键词	Germanium MOSFETs ballistic transport pulsed IV GeOI self-heating effect P-CHANNEL
DOI	10.1109/LED.2017.2674178
英文摘要	We demonstrate an experimental study on the ballistic transport behavior of sub-100 nm GeOI n-MOSFETs, by adopting an ultrafast pulsed I-V system for measurement. High performance GeOI n-MOSFETs suffer severer self-heating effect and traps in the dc characterization process than in a "real" high-speed IC circuit. In this letter, the ballistic transport parameters for nanoscale Ge n-MOSFETs are extracted by the pulsed I-V method, and is compared with the SOI n-MOSFETs. The ballsiticity for Ge MOSFETs is higher than Si transistors at the same gate length LG. Furthermore, the scalability of the ballistic parameters for Ge n-MOSFETs ismodeled and predicted for the sub-10-nm technology nodes.; National Natural Science Foundation of China [61376097, 61504120]; Zhejiang Provincial Natural Science Foundation of China [LR14F040001]; SCI(E); ARTICLE; 4; 434-437; 38
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/474288]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Cheng, Ran,Yin, Longxiang,Wu, Heng,et al. Experimental Investigation of Ballistic Carrier Transport for Sub-100-nm Ge n-MOSFETs[J]. IEEE ELECTRON DEVICE LETTERS,2017.
APA	Cheng, Ran.,Yin, Longxiang.,Wu, Heng.,Yu, Xiao.,Zhang, Yanyan.,...&Zhao, Yi.(2017).Experimental Investigation of Ballistic Carrier Transport for Sub-100-nm Ge n-MOSFETs.IEEE ELECTRON DEVICE LETTERS.
MLA	Cheng, Ran,et al."Experimental Investigation of Ballistic Carrier Transport for Sub-100-nm Ge n-MOSFETs".IEEE ELECTRON DEVICE LETTERS (2017).