Impact of tungsten oxidation conditions on the performance of   Al2O3/WOx-based CBRAM devices

doi:10.1016/j.mee.2017.04.026

CORC > 北京大学 > 信息科学技术学院

	Impact of tungsten oxidation conditions on the performance of Al2O3/WOx-based CBRAM devices
	Chen, Z. ; Belmonte, A. ; Chen, C. Y. ; Radhakrishnan, J. ; Redolfi, A. ; Kang, J. ; Goux, L. ; Kar, G. S.
刊名	MICROELECTRONIC ENGINEERING
	2017
关键词	CBRAM CF Al2O3/WOx Endurance MEMORIES
DOI	10.1016/j.mee.2017.04.026
英文摘要	In this paper, we assess the impact of different W oxidation conditions on the electrical performance of Cu/AIl(2)O(3)/WON-based CBRAM devices. While HR-TEM characterization carried out on samples with three different oxidation conditions reveals that WON is always in the crystalline phase in our oxidation temperature range, higher oxidation temperature leads to denser and thicker oxides. By performing DC and AC electrical characterization, we demonstrate that a careful engineering of the W oxidation conditions enables to boost the performance of these devices. In particular, we prove that a trade-off between density and thickness must be pursued in order to enlarge the memory window and extend the endurance lifetime with short (10 ns) pulses. (C) 2017 Published by Elsevier B.V.; China Scholarship Council [201506010181]; SCI(E); ARTICLE; 56-59; 179
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/472249]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Chen, Z.,Belmonte, A.,Chen, C. Y.,et al. Impact of tungsten oxidation conditions on the performance of Al2O3/WOx-based CBRAM devices[J]. MICROELECTRONIC ENGINEERING,2017.
APA	Chen, Z..,Belmonte, A..,Chen, C. Y..,Radhakrishnan, J..,Redolfi, A..,...&Kar, G. S..(2017).Impact of tungsten oxidation conditions on the performance of Al2O3/WOx-based CBRAM devices.MICROELECTRONIC ENGINEERING.
MLA	Chen, Z.,et al."Impact of tungsten oxidation conditions on the performance of Al2O3/WOx-based CBRAM devices".MICROELECTRONIC ENGINEERING (2017).