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	Gd Doping Improved Resistive Switching Characteristics of TiO2-Based Resistive Memory Devices (vol 47, pg 2710, 2008)
	Liu, Li-Feng ; Kang, Jin-Feng ; Tang, Hao ; Xu, Nuo ; Sun, Xiao ; Chen, Chen ; Sun, Bing ; Wang, Yi ; Liu, Xiao-Yan ; Zhang, Xing ; Han, Ru-Qi
刊名	JAPANESE JOURNAL OF APPLIED PHYSICS
	2017
DOI	10.7567/JJAP.56.109201
英文摘要	SCI(E); CORRECTION; 10; 56
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/470684]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Liu, Li-Feng,Kang, Jin-Feng,Tang, Hao,et al. Gd Doping Improved Resistive Switching Characteristics of TiO2-Based Resistive Memory Devices (vol 47, pg 2710, 2008)[J]. JAPANESE JOURNAL OF APPLIED PHYSICS,2017.
APA	Liu, Li-Feng.,Kang, Jin-Feng.,Tang, Hao.,Xu, Nuo.,Sun, Xiao.,...&Han, Ru-Qi.(2017).Gd Doping Improved Resistive Switching Characteristics of TiO2-Based Resistive Memory Devices (vol 47, pg 2710, 2008).JAPANESE JOURNAL OF APPLIED PHYSICS.
MLA	Liu, Li-Feng,et al."Gd Doping Improved Resistive Switching Characteristics of TiO2-Based Resistive Memory Devices (vol 47, pg 2710, 2008)".JAPANESE JOURNAL OF APPLIED PHYSICS (2017).

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