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	Interposer Fabrication with Annular Copper TSV and Multi-layered Redistribution Layer
	Guan, Yong ; Ma, Shenglin ; Zeng, Qinghua ; Meng, Wei ; Chen, Jing ; Jin, Yufeng
	2016
英文摘要	This paper proposes an interposer fabrication methods with annular copper through-silicon via (TSV) and multi layered redistribution layer. Additives, current density, forced convection and environment temperature are taken into consideration in order to realize the equal-wall annular TSV filling. A multi-layered redistribution layer is fabricated on the front-side of interposer employing electroplating process and photolithographic process. Benzocyclobutene is used as the interlayer dielectric layer. A given number of interposer samples with annular copper TSV and multi-layered redistribution layer are fabricated. X-ray inspection and cross section observation are carried out to support the good quality of this proposed interposer integration approach.; Major State Basic Research Development Program of China [2015CB057201]; National Natural Science Foundation of China [U1537208]; National High Technology Research and Development Program of China (863) [2015AA043601]; CPCI-S(ISTP); 670-674
语种	英语
出处	18th IEEE Electronics Packaging Technology Conference (EPTC)
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/470095]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Guan, Yong,Ma, Shenglin,Zeng, Qinghua,et al. Interposer Fabrication with Annular Copper TSV and Multi-layered Redistribution Layer. 2016-01-01.

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