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	Fabrication Process of a Triple-Layer Stacked TSV Interposer for Switch Matrix Consisting of Eight RF Chips
	Meng, Wei ; Guan, Yong ; Zeng, Qinghua ; Chen, Jing ; Jin, Yufeng
	2016
英文摘要	This paper presents one fabrication process of a triple layer stacked TSV interposer for switch matrix consisting of eight RF chips. There are about 600 TSVs in the interposer and the diameter of TSV is 40um with the aspect ratio being 4:1. The whole area of the interposer is 13.5 mm X 7.5mm and the thickness of the triple-layer stacked interposer is only about 0.7mm. After the process, the electrical properties of RDL and TSV on the interposer are tested and the transmission losses of them are only about 0.2dB and 1.39dB at 4GHz, respectively.; National Basic Research Program of China [2015CB057201]; National High Technology Research and Development Program of China (863) [2015AA043601]; Major State Basic Research Development Program of China [2015CB0572]; CPCI-S(ISTP); 666-669
语种	英语
出处	18th IEEE Electronics Packaging Technology Conference (EPTC)
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/470094]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Meng, Wei,Guan, Yong,Zeng, Qinghua,et al. Fabrication Process of a Triple-Layer Stacked TSV Interposer for Switch Matrix Consisting of Eight RF Chips. 2016-01-01.

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