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	Threshold voltage adjustment of pMOS-radiation field-effect transistor with thick thermal oxide
	Wang, Shuaimin ; Liu, Peng ; Zhang, Jinwen
	2013
英文摘要	The pMOS-RADFET (radiation field-effect transistor) as a microdosimeter has been widely applied in spacecraft, medicine and personal dosimetry. Thick gate-oxide and zero threshold voltage (Vth) are two critical factors to achieve a high performance pMOS-RADFET. In this reported work, threshold voltage adjustment techniques for a thick gate oxide RADFET by B + implantation are systematically simulated by Silvaco technology computer-Aided design, including implanting energy, implanting dose and annealing conditions. Impurity distributions in gate oxide and silicon substrate are analysed. The results show that the thicker the gate oxide is, the higher the implanting energy and larger dose for tuning Vth to 0 V. Both the annealing temperature and the time have to be as low and as short as possible on the premise of sufficient ion activation.? The Institution of Engineering and Technology 2013.; EI; 10; 575-578; 8
语种	英语
DOI标识	10.1049/mnl.2013.0275
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/461353]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Wang, Shuaimin,Liu, Peng,Zhang, Jinwen. Threshold voltage adjustment of pMOS-radiation field-effect transistor with thick thermal oxide. 2013-01-01.

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