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	ELECTROLYTE-OXIDE-SEMICONDUCTOR STRUCTURES AS PH SENSORS BASED ON RESISTIVE-SWITCHING CHARACTERISTIC
	Wang, H. ; Chen, Z. ; Chen, X. ; Wu, W.
	2016
关键词	FIELD-EFFECT TRANSISTOR SYSTEMS
英文摘要	An electrolyte-oxide-semiconductor (EOS) structure is reported as a pH sensor in this paper, which provides a new method of pH sensing based on the resistive-switching characteristic for the first time. The concept of conductive filaments is introduced for EOS structures to explain their resistive-switching property. We find that the threshold-voltage shift in the C-V and 1-V curves approximately linearly increases with the augment of electrolyte solution's pH value from 1 to 12. showing a linear sensitivity about 46.3 mV/pH. The easily fabricated EOS sensor array could provide multiple and synchronic measurements. The different reverse leakage-current phenomena of EOS sensors with different electrolytes might broaden chemical sensing applications.; CPCI-S(ISTP); wuwg@pku.edu.cn; 897-900
语种	英语
出处	29th IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/457044]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Wang, H.,Chen, Z.,Chen, X.,et al. ELECTROLYTE-OXIDE-SEMICONDUCTOR STRUCTURES AS PH SENSORS BASED ON RESISTIVE-SWITCHING CHARACTERISTIC. 2016-01-01.

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