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Reliability Tests and Improvements on Sc-contacted n-type Carbon Nanotube Transistors; Reliability Tests and Improvements on Sc-contacted n-type Carbon Nanotube Transistors
Shibo Liang ; Zhiyong Zhang ; Tian Pei ; Lian-Mao Peng
2013
关键词Stability Carbon Nanotube n-type Field-Effect Transistor Passivation Reliability Stability Carbon Nanotube n-type Field-Effect Transistor Passivation Reliability
英文摘要Scandium (Sc) contacted n-type carbon nanotube (CNT) field-effected transistors (FETs) with back and top-gate structure were fabricated, and their stability in air were investigated. It was shown that oxygen and water molecules may affect both the nanotube channel and Sc/nanotube contacts, leading t...; Scandium (Sc) contacted n-type carbon nanotube (CNT) field-effected transistors (FETs) with back and top-gate structure were fabricated, and their stability in air were investigated. It was shown that oxygen and water molecules may affect both the nanotube channel and Sc/nanotube contacts, leading t...; 国家纳米科学中心; 1
语种英语
内容类型其他
源URL[http://ir.pku.edu.cn/handle/20.500.11897/451101]  
专题信息科学技术学院
推荐引用方式
GB/T 7714
Shibo Liang,Zhiyong Zhang,Tian Pei,et al. Reliability Tests and Improvements on Sc-contacted n-type Carbon Nanotube Transistors, Reliability Tests and Improvements on Sc-contacted n-type Carbon Nanotube Transistors. 2013-01-01.
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