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	Investigations on Proton-Irradiation-Induced Spacer Damage in Deep-Submicron MOSFETs; Investigations on Proton-Irradiation-Induced Spacer Damage in Deep-Submicron MOSFETs
	Shoubin Xue ; Pengfei Wang ; Ru Huang ; Dake Wu ; Yunpeng Pei ; Wenhua Wang ; Xing Zhang
	2008
关键词	drain irradiation capture defects saturation lager proton hardness degraded isolation drain irradiation capture defects saturation lager proton hardness degraded isolation
英文摘要	In this paper,we have focused our attention on DC characteristics degradation of 0.18μm MOSFETs after 10-MeV proton irradiation.It is shown that the threshold voltage shift,the transconductance degradation and the saturation drain current decrease are lager in PMOSFETs,while small effects are exh...; In this paper,we have focused our attention on DC characteristics degradation of 0.18μm MOSFETs after 10-MeV proton irradiation.It is shown that the threshold voltage shift,the transconductance degradation and the saturation drain current decrease are lager in PMOSFETs,while small effects are exh...; IEEE Beijing Section、Chinese Institute of Electronics (CIE); 4
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/450970]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Shoubin Xue,Pengfei Wang,Ru Huang,et al. Investigations on Proton-Irradiation-Induced Spacer Damage in Deep-Submicron MOSFETs, Investigations on Proton-Irradiation-Induced Spacer Damage in Deep-Submicron MOSFETs. 2008-01-01.

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