| 3D KMC Reliability Simulation of Nano-Scaled HKMG nMOSFETs with Multiple Traps Coupling | |
| Li, Yun ; Lun, Zhiyuan ; Huang, Peng ; Wang, Yijiao ; Jiang, Hai ; Du, Gang ; Liu, Xiaoyan | |
| 2015 | |
| 关键词 | HKMG nMOSFETs 3D kinetic Monte-Carlo multiple traps coupling trap generation/recombination capture time emission time threshold voltage shift trapping detrapping PBTI |
| 英文摘要 | This paper presents coupling characteristics of multiple traps in HKMG nMOSFETs by a 3D kinetic Monte-Carlo (KMC) simulator we developed, which includes several fully-coupled multi-physical models: trap generation/recombination, trapping/detrapping to/from channel, metal gate, and the interaction of traps. It shows that activation energy and trapping/detrapping from/to channel/gate impact on coupling of multiple traps. Interaction of traps complicates mechanism in TAT current, BTI, and RTN.; CPCI-S(ISTP); gangdu@pku.edu.cn; xyliu@ime.pku.edu.cn; 148-151 |
| 语种 | 英语 |
| 出处 | International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) |
| 内容类型 | 其他 |
| 源URL | [http://ir.pku.edu.cn/handle/20.500.11897/450253]  |
| 专题 | 信息科学技术学院 |
| 推荐引用方式 GB/T 7714 | Li, Yun,Lun, Zhiyuan,Huang, Peng,et al. 3D KMC Reliability Simulation of Nano-Scaled HKMG nMOSFETs with Multiple Traps Coupling. 2015-01-01. |
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