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	IMPACT OF STI STRESS ON 40-NM DOGBONE LAYOUT N-MOSFETS
	Wang, Liu ; Li, Liubin ; Wang, Lei ; Jiang, Lele ; Wei, Tai ; Cheng, Yuhua
	2016
关键词	PERFORMANCE
英文摘要	Based on the test structures and silicon measurement data done at 40nm technology, we analyze the impact of varying length between the contacted active-area and gate (S) on the performance of NMOS dogbone devices, such as saturation drain current (Idsat), threshold voltage (Vth). and leakage current (loff). The experiments show that as the length between the contacted active area and gate (S) is increased from 0.07um to 5.02um, both Idsat and loff reach the maximum at 0.62um and then gradually decrease, while Vth has a 19.7% monotonic decrease.; CPCI-S(ISTP); wangliu@shrime-pku.org.cn
语种	英语
出处	China Semiconductor Technology International Conference (CSTIC)
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/450098]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Wang, Liu,Li, Liubin,Wang, Lei,et al. IMPACT OF STI STRESS ON 40-NM DOGBONE LAYOUT N-MOSFETS. 2016-01-01.

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