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	THE KINETIC BEHAVIOR AND CHARACTERISTICS OF THE OXIDATION OF THIN POLYCRYSTALLINE SILICON FILMS; THE KINETIC BEHAVIOR AND CHARACTERISTICS OF THE OXIDATION OF THIN POLYCRYSTALLINE SILICON FILMS
	WANG Yangyuan
	1989
关键词	fabrication controllable isolation boron circuits oxidized orient explain ingle 卜甲
英文摘要	Ⅰ.Introduction Polycrystalline silicon thin films have been widely used in the fabrication of integrated circuits.The thermal oxidation of polysilicon is important because the SiO2 layer is needed to provide the electrical isolation.Therefore,accurate knowledge of oxidation kinetic of polysilicon...; Ⅰ.Introduction Polycrystalline silicon thin films have been widely used in the fabrication of integrated circuits.The thermal oxidation of polysilicon is important because the SiO2 layer is needed to provide the electrical isolation.Therefore,accurate knowledge of oxidation kinetic of polysilicon...; Chinese Institute of Electronics(CIE)、IEEE Beijing Section; 3
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/444040]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	WANG Yangyuan. THE KINETIC BEHAVIOR AND CHARACTERISTICS OF THE OXIDATION OF THIN POLYCRYSTALLINE SILICON FILMS, THE KINETIC BEHAVIOR AND CHARACTERISTICS OF THE OXIDATION OF THIN POLYCRYSTALLINE SILICON FILMS. 1989-01-01.

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