CORC  > 北京大学  > 信息科学技术学院
NUMERICAL SIMULATION OF SEMICONDUCT OR DEVICES WITH HETEROSTRUCTURE; NUMERICAL SIMULATION OF SEMICONDUCT OR DEVICES WITH HETEROSTRUCTURE
YU Zhiping ; YE Liangxiu ; DENG Xiancan ; LI Zhijian
1989
关键词bipolar looking solver drift classified momentum handle transistor simulator determining bipolar looking solver drift classified momentum handle transistor simulator determining
英文摘要Gneral numerical approaches to the analysis of semiconductor devices with hetero-structure including those fabricated on superlattice materials are discussed.Three levels of numerical simulationsthe drift-diffusion equation(DDE) solver coupled with momentum and energy equations,Monte-Carlo (MC) m...; Gneral numerical approaches to the analysis of semiconductor devices with hetero-structure including those fabricated on superlattice materials are discussed.Three levels of numerical simulationsthe drift-diffusion equation(DDE) solver coupled with momentum and energy equations,Monte-Carlo (MC) m...; Chinese Institute of Electronics(CIE)、IEEE Beijing Section; 3
语种英语
内容类型其他
源URL[http://ir.pku.edu.cn/handle/20.500.11897/444026]  
专题信息科学技术学院
推荐引用方式
GB/T 7714
YU Zhiping,YE Liangxiu,DENG Xiancan,et al. NUMERICAL SIMULATION OF SEMICONDUCT OR DEVICES WITH HETEROSTRUCTURE, NUMERICAL SIMULATION OF SEMICONDUCT OR DEVICES WITH HETEROSTRUCTURE. 1989-01-01.
个性服务
查看访问统计
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。


©版权所有 ©2017 CSpace - Powered by CSpace