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	Improved electrical stability of double-gate a-IGZO TFTs
	He, Xin ; Wang, Ling ; Deng, Wei ; Xiao, Xiang ; Zhang, Letao ; Leng, Chuanli ; Chan, Mansun ; Zhang, Shengdong
	2015
英文摘要	The electrical stability of double-gate (DG) and single-gate (SG) amorphous indium-gallium-zinc oxide (a-IGZO) TFTs is investigated and compared. The SG device shows an abnormal negative shift in Vthaccompanying with deterioration in SS under PBS, which is not observed in DG device or SG device stressed in vacuum. Moreover, the SG device exhibits a much larger negative Vthshift than DG device and SG device stressed in vacuum. The improved electrical stability of DG device comes from not only the lowered vertical electric field but also more effective moisture resistance due to the shield of DG electrodes. ? 2015 SID.; EI; Book 3; 1151-1154; 46
语种	中文
出处	2015 SID International Symposium
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/436807]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	He, Xin,Wang, Ling,Deng, Wei,et al. Improved electrical stability of double-gate a-IGZO TFTs. 2015-01-01.

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