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	Reliability variability simulation methodology for IC design: An EDA perspective
	Zhang, Aixi ; Huang, Chunyi ; Guo, Tianlei ; Chen, Alvin ; Guo, Shaofeng ; Wang, Runsheng ; Huang, Ru ; Xie, Jushan
	2016
英文摘要	The reliability variation simulation methodology for advanced integrated circuit (IC) design is presented from an Electronic Design Automation (EDA) perspective. Reliability effects, such as hot carrier injection (HCI) and bias temperature instability (BTI), continue to be one of major concerns when devices scale down to smaller sizes. Reliability variability, considering process variation (PV) and aging variation (AV), is becoming critical for circuit reliability and yield. In this paper, we present and compare various reliability variability methodologies that incorporate process and aging variations for circuit simulation. Additionally, the correlation between PV and AV is analyzed. Finally, two representative circuits (ring oscillator and SRAM) are demonstrated with the reliability variation-aware simulation. ? 2015 IEEE.; EI; 11.5.1-11.5.4; 2016-February
语种	英语
出处	61st IEEE International Electron Devices Meeting, IEDM 2015
DOI标识	10.1109/IEDM.2015.7409677
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/436302]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Zhang, Aixi,Huang, Chunyi,Guo, Tianlei,et al. Reliability variability simulation methodology for IC design: An EDA perspective. 2016-01-01.

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