Electrolyte-oxide-semiconductor structures as pH sensors based on resistive-switching characteristic | |
Wang, H. ; Chen, Z. ; Chen, X. ; Wu, W. | |
2016 | |
英文摘要 | An electrolyte-oxide-semiconductor (EOS) structure is reported as a pH sensor in this paper, which provides a new method of pH sensing based on the resistive-switching characteristic for the first time. The concept of conductive filaments is introduced for EOS structures to explain their resistive-switching property. We find that the threshold-voltage shift in the C-V and I-V curves approximately linearly increases with the augment of electrolyte solution's pH value from 1 to 12, showing a linear sensitivity about 46.3 mV/pH. The easily fabricated EOS sensor array could provide multiple and synchronic measurements. The different reverse leakage-current phenomena of EOS sensors with different electrolytes might broaden chemical sensing applications. ? 2016 IEEE.; EI; 897-900; 2016-February |
语种 | 英语 |
出处 | 29th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2016 |
DOI标识 | 10.1109/MEMSYS.2016.7421775 |
内容类型 | 其他 |
源URL | [http://ir.pku.edu.cn/handle/20.500.11897/436243] |
专题 | 信息科学技术学院 |
推荐引用方式 GB/T 7714 | Wang, H.,Chen, Z.,Chen, X.,et al. Electrolyte-oxide-semiconductor structures as pH sensors based on resistive-switching characteristic. 2016-01-01. |
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