Physical Modeling of Gate-Controlled Schottky Barrier Lowering of   Metal-Graphene Contacts in Top-Gated Graphene Field-Effect Transistors

doi:10.1038/srep18307

CORC > 北京大学 > 信息科学技术学院

	Physical Modeling of Gate-Controlled Schottky Barrier Lowering of Metal-Graphene Contacts in Top-Gated Graphene Field-Effect Transistors
	Mao, Ling-Feng ; Ning, Huansheng ; Huo, Zong-Liang ; Wang, Jin-Yan
刊名	SCIENTIFIC REPORTS
	2015
关键词	ELECTRON-MOBILITY MOSFETS DEVICE
DOI	10.1038/srep18307
英文摘要	A new physical model of the gate controlled Schottky barrier height (SBH) lowering in top-gated graphene field-effect transistors (GFETs) under saturation bias condition is proposed based on the energy conservation equation with the balance assumption. The theoretical prediction of the SBH lowering agrees well with the experimental data reported in literatures. The reduction of the SBH increases with the increasing of gate voltage and relative dielectric constant of the gate oxide, while it decreases with the increasing of oxide thickness, channel length and acceptor density. The magnitude of the reduction is slightly enhanced under high drain voltage. Moreover, it is found that the gate oxide materials with large relative dielectric constant (> 20) have a significant effect on the gate controlled SBH lowering, implying that the energy relaxation of channel electrons should be taken into account for modeling SBH in GFETs.; National Natural Science Foundation of China [61076102, 61471035]; SCI(E); PubMed; ARTICLE; mail_lingfeng@aliyun.com; 18307; 5
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/435853]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Mao, Ling-Feng,Ning, Huansheng,Huo, Zong-Liang,et al. Physical Modeling of Gate-Controlled Schottky Barrier Lowering of Metal-Graphene Contacts in Top-Gated Graphene Field-Effect Transistors[J]. SCIENTIFIC REPORTS,2015.
APA	Mao, Ling-Feng,Ning, Huansheng,Huo, Zong-Liang,&Wang, Jin-Yan.(2015).Physical Modeling of Gate-Controlled Schottky Barrier Lowering of Metal-Graphene Contacts in Top-Gated Graphene Field-Effect Transistors.SCIENTIFIC REPORTS.
MLA	Mao, Ling-Feng,et al."Physical Modeling of Gate-Controlled Schottky Barrier Lowering of Metal-Graphene Contacts in Top-Gated Graphene Field-Effect Transistors".SCIENTIFIC REPORTS (2015).