Investigation of Self-Heating Effect on Hot Carrier Degradation in   Multiple-Fin SOI FinFETs

doi:10.1109/LED.2015.2487045

CORC > 北京大学 > 信息科学技术学院

	Investigation of Self-Heating Effect on Hot Carrier Degradation in Multiple-Fin SOI FinFETs
	Jiang, Hai ; Liu, Xiaoyan ; Xu, Nuo ; He, Yandong ; Du, Gang ; Zhang, Xing
刊名	IEEE ELECTRON DEVICE LETTERS
	2015
关键词	FinFETs hot carrier degradation (HCD) reliability self-heating effect (SHE) silicon-on-insulator (SOI) thermal resistance (Rth) N-FINFETS MOSFETS INJECTION
DOI	10.1109/LED.2015.2487045
英文摘要	In this letter, the impact of self-heating effect (SHE) on hot carrier degradation (HCD) in multiple-fin silicon-on-insulator (SOI) FinFETs was investigated. First, the ac conductance method has been utilized to extract the thermal resistance (Rth) of SOI FinFETs with different fin numbers. Then, both dc and ac stresses are applied on the gate and drain of transistors with the source grounded to characterize the HCD. It is found that the device with large fin number demonstrates high-temperature rise caused by SHE, which results in the enhanced generation of oxide bulk trapped charges. Thus, the SHE aggravates the HCD significantly. The influence of SHE on HCD is mitigated when the frequency of ac stress is above 10 MHz. Therefore, special attention to the SHE on HCD must be paid for accurate HCD prediction in FinFETs.; National Natural Science Foundation of China [61421005]; National Basic Research Program of China [2011CBA00600]; SCI(E); EI; ARTICLE; xyliu@ime.pku.edu.cn; zhx@pku.edu.cn; 12; 1258-1260; 36
语种	中文
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/435696]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Jiang, Hai,Liu, Xiaoyan,Xu, Nuo,et al. Investigation of Self-Heating Effect on Hot Carrier Degradation in Multiple-Fin SOI FinFETs[J]. IEEE ELECTRON DEVICE LETTERS,2015.
APA	Jiang, Hai,Liu, Xiaoyan,Xu, Nuo,He, Yandong,Du, Gang,&Zhang, Xing.(2015).Investigation of Self-Heating Effect on Hot Carrier Degradation in Multiple-Fin SOI FinFETs.IEEE ELECTRON DEVICE LETTERS.
MLA	Jiang, Hai,et al."Investigation of Self-Heating Effect on Hot Carrier Degradation in Multiple-Fin SOI FinFETs".IEEE ELECTRON DEVICE LETTERS (2015).