Novel Vertical 3D Structure of TaOx-based RRAM with Self-localized   Switching Region by Sidewall Electrode Oxidation

doi:10.1038/srep21020

CORC > 北京大学 > 信息科学技术学院

	Novel Vertical 3D Structure of TaOx-based RRAM with Self-localized Switching Region by Sidewall Electrode Oxidation
	Yu, Muxi ; Cai, Yimao ; Wang, Zongwei ; Fang, Yichen ; Liu, Yefan ; Yu, Zhizhen ; Pan, Yue ; Zhang, Zhenxing ; Tan, Jing ; Yang, Xue ; Li, Ming ; Huang, Ru
刊名	SCIENTIFIC REPORTS
	2016
关键词	NONVOLATILE MEMORY TECHNOLOGIES THERMAL-OXIDATION RESISTIVE MEMORY EDGE ELECTRODES THIN-FILMS RESISTANCE DEVICE BEHAVIORS FILAMENT OXYGEN
DOI	10.1038/srep21020
英文摘要	A novel vertical 3D RRAM structure with greatly improved reliability behavior is proposed and experimentally demonstrated through basically compatible process featuring self-localized switching region by sidewall electrode oxidation. Compared with the conventional structure, due to the effective confinement of the switching region, the newly-proposed structure shows about two orders higher endurance (>10(8) without verification operation) and better retention (>180h@150 degrees C), as well as high uniformity. Corresponding model is put forward, on the base of which thorough theoretical analysis and calculations are conducted as well, demonstrating that, resulting from the physically-isolated switching from neighboring cells, the proposed structure exhibits dramatically improved reliability due to effective suppression of thermal effects and oxygen vacancies diffusion interference, indicating that this novel structure is very promising for future high density 3D RRAM application.; National Natural Science Foundation of China [61421005, 61376087, 61574007]; National High Technology Research and Development Program of China [2011AA010401, 2011AA010402]; National Basic Research Program of China [2011CBA00601]; SCI(E); PubMed; ARTICLE; caiyimao@pku.edu.cn; ruhuang@pku.edu.cn; 21020; 6
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/434895]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Yu, Muxi,Cai, Yimao,Wang, Zongwei,et al. Novel Vertical 3D Structure of TaOx-based RRAM with Self-localized Switching Region by Sidewall Electrode Oxidation[J]. SCIENTIFIC REPORTS,2016.
APA	Yu, Muxi.,Cai, Yimao.,Wang, Zongwei.,Fang, Yichen.,Liu, Yefan.,...&Huang, Ru.(2016).Novel Vertical 3D Structure of TaOx-based RRAM with Self-localized Switching Region by Sidewall Electrode Oxidation.SCIENTIFIC REPORTS.
MLA	Yu, Muxi,et al."Novel Vertical 3D Structure of TaOx-based RRAM with Self-localized Switching Region by Sidewall Electrode Oxidation".SCIENTIFIC REPORTS (2016).