Growth of High Material Quality Group III-Antimonide Semiconductor   Nanowires by a Naturally Cooling Process

doi:10.1186/s11671-016-1443-4

CORC > 北京大学 > 信息科学技术学院

	Growth of High Material Quality Group III-Antimonide Semiconductor Nanowires by a Naturally Cooling Process
	Li, Kan ; Pan, Wei ; Wang, Jingyun ; Pan, Huayong ; Huang, Shaoyun ; Xing, Yingjie ; Xu, H. Q.
刊名	NANOSCALE RESEARCH LETTERS
	2016
关键词	VLS mechanism Chemical vapor deposition Naturally cooling growth BIAS CONDUCTANCE PEAK SILICON NANOWIRES VAPOR-DEPOSITION HYBRID DEVICE MIGRATION
DOI	10.1186/s11671-016-1443-4
英文摘要	We report on a simple but powerful approach to grow high material quality InSb and GaSb nanowires in a commonly used tube furnace setup. The approach employs a process of stable heating at a high temperature and then cooling down naturally to room temperature with the nanowire growth occurred effectively during the naturally cooling step. As-grown nanowires are analyzed using a scanning electron microscope and a transmission electron microscope equipped with an energy-dispersive X-ray spectroscopy setup. It is shown that the grown nanowires are several micrometers in lengths and are zincblende InSb and GaSb crystals. The FET devices are also fabricated with the grown nanowires and investigated. It is shown that the grown nanowires show good, desired electrical properties and should have potential applications in the future nanoelectronics and infrared optoelectronics.; National Basic Research Program of China [2012CB932700, 2012CB932701, 2012CB932703]; National Natural Science Foundation of China [91421303, 91221202, 11274021, 61321001, 61376059]; Swedish Research Council (VR); SCI(E); EI; PubMed; ARTICLE; xingyj@pku.edu.cn; hqxu@pku.edu.cn; 1; 222; 11
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/433982]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Li, Kan,Pan, Wei,Wang, Jingyun,et al. Growth of High Material Quality Group III-Antimonide Semiconductor Nanowires by a Naturally Cooling Process[J]. NANOSCALE RESEARCH LETTERS,2016.
APA	Li, Kan.,Pan, Wei.,Wang, Jingyun.,Pan, Huayong.,Huang, Shaoyun.,...&Xu, H. Q..(2016).Growth of High Material Quality Group III-Antimonide Semiconductor Nanowires by a Naturally Cooling Process.NANOSCALE RESEARCH LETTERS.
MLA	Li, Kan,et al."Growth of High Material Quality Group III-Antimonide Semiconductor Nanowires by a Naturally Cooling Process".NANOSCALE RESEARCH LETTERS (2016).