Electronic Structures of Free-Standing Nanowires made from Indirect   Bandgap Semiconductor Gallium Phosphide

doi:10.1038/srep28240

CORC > 北京大学 > 信息科学技术学院

	Electronic Structures of Free-Standing Nanowires made from Indirect Bandgap Semiconductor Gallium Phosphide
	Liao, Gaohua ; Luo, Ning ; Chen, Ke-Qiu ; Xu, H. Q.
刊名	SCIENTIFIC REPORTS
	2016
关键词	TIGHT-BINDING PARAMETERS GAP NANOWIRES WURTZITE WATER GAAS ZINC
DOI	10.1038/srep28240
英文摘要	We present a theoretical study of the electronic structures of freestanding nanowires made from gallium phosphide (GaP)-a III-V semiconductor with an indirect bulk bandgap. We consider [001]-oriented GaP nanowires with square and rectangular cross sections, and [111]-oriented GaP nanowires with hexagonal cross sections. Based on tight binding models, both the band structures and wave functions of the nanowires are calculated. For the [001]-oriented GaP nanowires, the bands show anti-crossing structures, while the bands of the [111]-oriented nanowires display crossing structures. Two minima are observed in the conduction bands, while the maximum of the valence bands is always at the G-point. Using double group theory, we analyze the symmetry properties of the lowest conduction band states and highest valence band states of GaP nanowires with different sizes and directions. The band state wave functions of the lowest conduction bands and the highest valence bands of the nanowires are evaluated by spatial probability distributions. For practical use, we fit the confinement energies of the electrons and holes in the nanowires to obtain an empirical formula.; National Basic Research Program of China [2012CB932703, 2012CB932700]; National Natural Science Foundation of China [91221202, 91421303, 61321001, 11274105]; SCI(E); PubMed; ARTICLE; keqiuchen@hnu.edu.cn; hqxu@pku.edu.cn; 28240; 6
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/433336]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Liao, Gaohua,Luo, Ning,Chen, Ke-Qiu,et al. Electronic Structures of Free-Standing Nanowires made from Indirect Bandgap Semiconductor Gallium Phosphide[J]. SCIENTIFIC REPORTS,2016.
APA	Liao, Gaohua,Luo, Ning,Chen, Ke-Qiu,&Xu, H. Q..(2016).Electronic Structures of Free-Standing Nanowires made from Indirect Bandgap Semiconductor Gallium Phosphide.SCIENTIFIC REPORTS.
MLA	Liao, Gaohua,et al."Electronic Structures of Free-Standing Nanowires made from Indirect Bandgap Semiconductor Gallium Phosphide".SCIENTIFIC REPORTS (2016).