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	The Phenomenon of "Sharp Corner" of Electrolyte-Oxide-Semiconductor Structure for Copper Ions Detection
	Gao, J. G. ; Wang, H. ; Ma, P. C. ; Wu, Wengang
	2014
关键词	Electrolyte-Oxide-Semiconductor (EOS) structure copper ions sharp corner threshold voltage LEAKAGE CURRENTS
英文摘要	We report a "sharp corner" phenomenon in the diodetype current-voltage (I-V) curves of the Electrolyte-Oxide-Semiconductor (EOS) structure which is made up of Cu-ion solution, SiO2 layer and Si substrate. The phenomenon just appears when the voltage scans from positive value to negative value due to the particularity in electrochemical interaction between Cu ions and Si-SiO2 system. Two kinds of Cu-ion electrolyte solution and different test conditions were employed to study the phenomenon. Other samples had also been tested to compare with the phenomenon. It has the potential to be developed into an electrochemical method of detecting Cu ions in solution phase.; CPCI-S(ISTP); wuwg@pku.edu.cn; 337-340
语种	英语
出处	2014 9TH IEEE INTERNATIONAL CONFERENCE ON NANO/MICRO ENGINEERED AND MOLECULAR SYSTEMS (NEMS)
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/424335]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Gao, J. G.,Wang, H.,Ma, P. C.,et al. The Phenomenon of "Sharp Corner" of Electrolyte-Oxide-Semiconductor Structure for Copper Ions Detection. 2014-01-01.

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