| DTMOS mode as an effective solution of RTN suppression for robust device/circuit co-design | |
| Guo, Shaofeng ; Huang, Ru ; Hao, Peng ; Luo, Mulong ; Ren, Pengpeng ; Wang, Jianping ; Bu, Weihai ; Wu, Jingang ; Wong, Waisum ; Yu, Scott ; Wu, Hanming ; Lee, Shiuh-Wuu ; Wang, Runsheng ; Wang, Yangyuan | |
| 2015 | |
| 英文摘要 | In this paper, using DTMOS as an effective solution of RTN suppression without device/circuit performance penalty is proposed and demonstrated for the first time, with experimental verification and circuit analysis. The experiments show that RTN amplitude is greatly reduced in DTMOS mode, which is even better than the body-biasing technique of FBB, due to the efficient dynamic modulation mechanism. Circuit stability and performance degradation induced by RTN are much improved in the design using DTMOS. New characteristics of RTN physics in DTMOS are also observed and studied in detail. The results are helpful to the robust and reliable device/circuit co-design in future nano-CMOS technology. ? 2014 IEEE.; EI; February; 12.6.1-12.6.4; 2015-February |
| 语种 | 英语 |
| 出处 | 2014 60th IEEE International Electron Devices Meeting, IEDM 2014 |
| DOI标识 | 10.1109/IEDM.2014.7047040 |
| 内容类型 | 其他 |
| 源URL | [http://ir.pku.edu.cn/handle/20.500.11897/423648]  |
| 专题 | 信息科学技术学院 |
| 推荐引用方式 GB/T 7714 | Guo, Shaofeng,Huang, Ru,Hao, Peng,et al. DTMOS mode as an effective solution of RTN suppression for robust device/circuit co-design. 2015-01-01. |
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