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	Insights into resistive switching characteristics of TaOx-RRAM by Monte-Carlo simulation
	Zhao, Y.D. ; Huang, P. ; Chen, Z. ; Liu, C. ; Li, H.T. ; Chen, B. ; Ma, W.J. ; Zhang, F.F. ; Gao, B. ; Liu, X.Y. ; Kang, J.F.
	2015
英文摘要	An atomistic Monte-Carlo simulator is developed for TaOx-based resistive switching random access memory (RRAM) including both the generation & recombination effect of oxygen vacancy defects with oxygen ions and the phase change effect between Ta2O5 and TaO2. Using the developed simulation tool, the resistive switching characteristics of the bi-layered Ta2O5/TaOx RRAM are investigated. The typical self-compliance behavior measured in the bi-layered Ta2O5/TaOx RRAM is reproduced by considering the interaction between Ta2O5 and TaOx, indicating that TaOx layer plays a critical role to the self-compliance behavior. ? 2015 IEEE.; EI; 2015-June
语种	英语
出处	2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015
DOI标识	10.1109/VLSI-TSA.2015.7117560
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/423472]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Zhao, Y.D.,Huang, P.,Chen, Z.,et al. Insights into resistive switching characteristics of TaOx-RRAM by Monte-Carlo simulation. 2015-01-01.

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