Nanoscale opening fabrication on Si (111) surface from SiO2 barrier for   vertical growth of III-V nanowire arrays

doi:10.1088/0957-4484/26/26/265302

CORC > 北京大学 > 信息科学技术学院

	Nanoscale opening fabrication on Si (111) surface from SiO2 barrier for vertical growth of III-V nanowire arrays
	Shi, Tuanwei ; Wang, Xiaoye ; Wang, Baojun ; Wang, Wei ; Yang, Xiaoguang ; Yang, Wenyuan ; Chen, Qing ; Xu, Hongqi ; Xu, Shengyong ; Yang, Tao
刊名	NANOTECHNOLOGY
	2015
关键词	nanowire nanohole vertical SiO2 barrier catalysts-free FIELD-EFFECT TRANSISTORS EPITAXIAL-GROWTH SILICON PERFORMANCE MOSFETS
DOI	10.1088/0957-4484/26/26/265302
英文摘要	We reported here a selectively additive process to fabricate nanoscale openings of an Si (111) surface from an SiO2 barrier layer. Such nanoscale openings are made for the growth of vertical III-V nanowires. The Si (111) surface protected by a patterned SiNx layer was thermally oxidized, which resulted in a selectively added SiO2 barrier layer. After removing the SiNx, nanoscale openings of the Si (111) surface were exposed for the nanowire growth. Arrays with patterned nanoholes of varied diameters from 60 nm to 334 nm have been used for position-controlled catalyst-free growth of vertical InAs nanowire arrays by metal-organic chemical vapor deposition. Correlations between the nanohole diameter and the diameter, length and growth yield of as-fabricated nanowire arrays have been investigated, showing a repeatable stability. This technique offers an alternative approach for the fabrication of novel III-V nanowire devices using vertical array configuration. A lateral thermal oxidation effect led to a smaller size of the Si opening than that of the SiNx protection nanoislands; therefore, the technique also offers a controllable way to produce nanoholes with an ultra-small diameter.; MOST of China [2012CB932702, 2012CB932701, 2012CB932703]; NSF of China [11374016, 61321001]; SCI(E); EI; PubMed; ARTICLE; ww2@pku.edu.cn; xusy@pku.edu.cn; tyang@semi.ac.com; 26; 265302; 26
语种	中文
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/418616]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Shi, Tuanwei,Wang, Xiaoye,Wang, Baojun,et al. Nanoscale opening fabrication on Si (111) surface from SiO2 barrier for vertical growth of III-V nanowire arrays[J]. NANOTECHNOLOGY,2015.
APA	Shi, Tuanwei.,Wang, Xiaoye.,Wang, Baojun.,Wang, Wei.,Yang, Xiaoguang.,...&Yang, Tao.(2015).Nanoscale opening fabrication on Si (111) surface from SiO2 barrier for vertical growth of III-V nanowire arrays.NANOTECHNOLOGY.
MLA	Shi, Tuanwei,et al."Nanoscale opening fabrication on Si (111) surface from SiO2 barrier for vertical growth of III-V nanowire arrays".NANOTECHNOLOGY (2015).