Simulation Study of the Impact of Quantum Confinement on the   Electrostatically Driven Performance of n-type Nanowire Transistors

doi:10.1109/TED.2015.2470235

CORC > 北京大学 > 信息科学技术学院

	Simulation Study of the Impact of Quantum Confinement on the Electrostatically Driven Performance of n-type Nanowire Transistors
	Wang, Yijiao ; Al-Ameri, Talib ; Wang, Xingsheng ; Georgiev, Vihar P. ; Towie, Ewan ; Amoroso, Salvatore Maria ; Brown, Andrew R. ; Cheng, Binjie ; Reid, David ; Riddet, Craig ; Shifren, Lucian ; Sinha, Saurabh ; Yeric, Greg ; Aitken, Robert ; Liu, Xiaoyan ; Kang, Jinfeng ; Asenov, Asen
刊名	IEEE TRANSACTIONS ON ELECTRON DEVICES
	2015
关键词	CMOS electrostatics nanowire transistors (NWs) performance quantum effects TCAD STATISTICAL VARIABILITY INVERSION-LAYERS GATE CMOS GENERATION ELECTRON DENSITY FINFETS DEVICES MOSFETS
DOI	10.1109/TED.2015.2470235
英文摘要	In this paper, we have studied the impact of quantum confinement on the performance of n-type silicon nanowire transistors (NWTs) for application in advanced CMOS technologies. The 3-D drift-diffusion simulations based on the density gradient approach that has been calibrated with respect to the solution of the Schrodinger equation in 2-D cross sections along the direction of the transport are presented. The simulated NWTs have cross sections and dimensional characteristics representative of the transistors expected at a 7-nm CMOS technology. Different gate lengths, cross-sectional shapes, spacer thicknesses, and doping steepness were considered. We have studied the impact of the quantum corrections on the gate capacitance, mobile charge in the channel, drain-induced barrier lowering, and subthreshold slope. The mobile charge to gate capacitance ratio, which is an indicator of the intrinsic speed of the NWTs, is also investigated. We have also estimated the optimal gate length for different NWT design conditions.; China Scholarship Council; European Commission [261868]; National Natural Science Foundation of China [61421005]; SCI(E); EI; ARTICLE; wangyijiao@pku.edu.cn; t.ali.1@research.gla.ac.uk; xingsheng.wang@glasgow.ac.uk; vihar.georgiev@glasgow.ac.uk; e.towie@goldstandardsimulations.com; s.amoroso@goldstandardsimulations.com; andrew.brown@glasgow.ac.uk; b.cheng@goldstandardsimulations.com; d.reid@goldstandardsimulations.com; c.riddet@goldstandardsimulations.com; lucian.shifren@arm.com; saurabh.sinha@arm.com; greg.yeric@arm.com; rob.aitken@arm.com; xyliu@ime.pku.edu.cn; kangjf@pku.edu.cn; a.asenov@elec.gla.ac.uk; 10; 3229-3236; 62
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/415994]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Wang, Yijiao,Al-Ameri, Talib,Wang, Xingsheng,et al. Simulation Study of the Impact of Quantum Confinement on the Electrostatically Driven Performance of n-type Nanowire Transistors[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2015.
APA	Wang, Yijiao.,Al-Ameri, Talib.,Wang, Xingsheng.,Georgiev, Vihar P..,Towie, Ewan.,...&Asenov, Asen.(2015).Simulation Study of the Impact of Quantum Confinement on the Electrostatically Driven Performance of n-type Nanowire Transistors.IEEE TRANSACTIONS ON ELECTRON DEVICES.
MLA	Wang, Yijiao,et al."Simulation Study of the Impact of Quantum Confinement on the Electrostatically Driven Performance of n-type Nanowire Transistors".IEEE TRANSACTIONS ON ELECTRON DEVICES (2015).