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A neuromorphic visual system using RRAM synaptic devices with Sub-pJ energy and tolerance to variability: Experimental characterization and large-scale modeling
Yu, Shimeng ; Gao, Bin ; Fang, Zheng ; Yu, Hongyu ; Kang, Jinfeng ; Wong, H.-S. Philip
2012
英文摘要We report the use of metal oxide resistive switching memory (RRAM) as synaptic devices for a neuromorphic visual system. At the device level, we experimentally characterized the gradual resistance modulation of RRAM by hundreds of identical pulses. As compared with phase change memory (PCM) reported recently in [1,2], >100??-1000?? energy consumption reduction was achieved in RRAM as synaptic devices (<1 pJ per spike). Based on the experimental results, we developed a stochastic model to quantify the device switching dynamics. At the system level, we simulated the performance of image orientation selectivity on a neuromorphic visual system which consists of 1,024 CMOS neuron circuits and 16,348 RRAM synaptic devices. It was found that the system can tolerate the temporal and spatial variability which are commonly present in RRAM devices, suggesting the feasibility of large-scale hardware implementation of neuromorphic system using RRAM synaptic devices. ? 2012 IEEE.; EI; 0
语种英语
DOI标识10.1109/IEDM.2012.6479018
内容类型其他
源URL[http://ir.pku.edu.cn/handle/20.500.11897/411962]  
专题信息科学技术学院
推荐引用方式
GB/T 7714
Yu, Shimeng,Gao, Bin,Fang, Zheng,et al. A neuromorphic visual system using RRAM synaptic devices with Sub-pJ energy and tolerance to variability: Experimental characterization and large-scale modeling. 2012-01-01.
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