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	Self-aligned double patterning friendly configuration for standard cell library considering placement impact
	Gao, Jhih-Rong ; Yu, Bei ; Huang, Ru ; Pan, David Z.
	2013
英文摘要	Self-aligned double patterning (SADP) has become a promising technique to push pattern resolution limit to sub-22nm technology node. Although SADP provides good overlay controllability, it encounters many challenges in physical design stages to obtain conflict-free layout decomposition. In this paper, we study the impact on placement by different standard cell layout decomposition strategies. We propose a SADP friendly standard cell configuration which provides pre-coloring results for standard cells. These configurations are brought into the placement stage to help ensure layout decomposability and save the extra effort for solving conflicts in later stages. ? 2013 SPIE.; EI; 0
语种	英语
DOI标识	10.1117/12.2011660
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/411556]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Gao, Jhih-Rong,Yu, Bei,Huang, Ru,et al. Self-aligned double patterning friendly configuration for standard cell library considering placement impact. 2013-01-01.

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