Band gap narrowing of strained Si1-xGex as a function of Ge fraction, temperature and impurity concentration

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	Band gap narrowing of strained Si1-xGex as a function of Ge fraction, temperature and impurity concentration
	Jin, Hai-Yan ; Zhang, Li-Chun
刊名	pan tao ti hsueh paochinese journal of semiconductors
	2001
英文摘要	An empirical method was proposed for determining the total bandgap narrowing in the base of a SiGe heterojunction bipolar transistor, which is a function of temperature, impurity concentration and germanium fraction. Calculating values have been obtained for a wide range of boron base doping concentration at different temperatures. The results are very comparable with the theoretical and experimental results given by literature.; EI; 0; 9; 1122-1126; 22
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/408341]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Jin, Hai-Yan,Zhang, Li-Chun. Band gap narrowing of strained Si1-xGex as a function of Ge fraction, temperature and impurity concentration[J]. pan tao ti hsueh paochinese journal of semiconductors,2001.
APA	Jin, Hai-Yan,&Zhang, Li-Chun.(2001).Band gap narrowing of strained Si1-xGex as a function of Ge fraction, temperature and impurity concentration.pan tao ti hsueh paochinese journal of semiconductors.
MLA	Jin, Hai-Yan,et al."Band gap narrowing of strained Si1-xGex as a function of Ge fraction, temperature and impurity concentration".pan tao ti hsueh paochinese journal of semiconductors (2001).