Direct tunneling relaxation spectroscopy in ultrathin gate oxide MOS structures under constant pressure stress

CORC > 北京大学 > 信息科学技术学院

	Direct tunneling relaxation spectroscopy in ultrathin gate oxide MOS structures under constant pressure stress
	Wei, Jian-Lin ; Mao, Ling-Feng ; Xu, Ming-Zhen ; Tan, Chang-Hua
刊名	pan tao ti hsueh paochinese journal of semiconductors
	2001
英文摘要	With the rapid scaling down of MOS devices, the direct tunneling current becomes the main factor for MOS device reliability instead of FN tunneling. Based on the method of proportional difference operator and the relaxation spectroscopy technique, a new relaxation spectroscopy technique known as direct tunneling relaxation spectroscopy was presented for the ultrathin gate oxide MOS structure under direct tunneling stress, which has the same advantages of original relaxation spectroscopy technique including direct, fast and convenient. It can separate and characterize different traps in an ultrathin direct tunneling gate oxide, and extract the parameters of an oxide trap, such as the generation/capture cross section and density. It can be used to study the mechanism of degradation in the ultrathin MOSFET under direct tunneling stress.; EI; 0; 6; 765-769; 22
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/408321]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Wei, Jian-Lin,Mao, Ling-Feng,Xu, Ming-Zhen,et al. Direct tunneling relaxation spectroscopy in ultrathin gate oxide MOS structures under constant pressure stress[J]. pan tao ti hsueh paochinese journal of semiconductors,2001.
APA	Wei, Jian-Lin,Mao, Ling-Feng,Xu, Ming-Zhen,&Tan, Chang-Hua.(2001).Direct tunneling relaxation spectroscopy in ultrathin gate oxide MOS structures under constant pressure stress.pan tao ti hsueh paochinese journal of semiconductors.
MLA	Wei, Jian-Lin,et al."Direct tunneling relaxation spectroscopy in ultrathin gate oxide MOS structures under constant pressure stress".pan tao ti hsueh paochinese journal of semiconductors (2001).