Investigation of gate defects in ultrathin MOS structures using DTRS technique

CORC > 北京大学 > 信息科学技术学院

	Investigation of gate defects in ultrathin MOS structures using DTRS technique
	Huo, Zongliang ; Yang, Guoyong ; Xu, Mingzhen ; Tan, Changhua ; Duan, Xiaorong
刊名	pan tao ti hsueh paochinese journal of semiconductors
	2002
英文摘要	A detailed description of relaxation spectroscopy technique under direct tunneling stress is given. A double peak phenomena by applied relaxation spectroscopy on ultra-thin (4 nm) under FN stress, and the centroid of oxide trap is closer to anode interface than in the center of oxide.; EI; 0; 11; 1146-1153; 23
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/408222]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Huo, Zongliang,Yang, Guoyong,Xu, Mingzhen,et al. Investigation of gate defects in ultrathin MOS structures using DTRS technique[J]. pan tao ti hsueh paochinese journal of semiconductors,2002.
APA	Huo, Zongliang,Yang, Guoyong,Xu, Mingzhen,Tan, Changhua,&Duan, Xiaorong.(2002).Investigation of gate defects in ultrathin MOS structures using DTRS technique.pan tao ti hsueh paochinese journal of semiconductors.
MLA	Huo, Zongliang,et al."Investigation of gate defects in ultrathin MOS structures using DTRS technique".pan tao ti hsueh paochinese journal of semiconductors (2002).