AC Performance analysis and structure optimization of ultra-thin body SOI MOSFET&apos;s

CORC > 北京大学 > 信息科学技术学院

	AC Performance analysis and structure optimization of ultra-thin body SOI MOSFET's
	Tian, Yu ; Huang, Ru
刊名	pan tao ti hsueh paochinese journal of semiconductors
	2005
英文摘要	A simulation-based analysis of 50 nm UTB MOSFET's, emphasizing on the AC performance in UTB SOI MOSFET's, is described. Aiming at the excellent DC and AC characteristics, small signal characteristics of the device are investigated in comparison with different geometric parameters and physical parameters. A method to alleviate the conflict between power and speed in allusion to UTB SOI MOSFET's, with different influence of various parameters on device AC characteristics, is proposed. It is beneficial to wider the application fields of UTB SOI MOSFET by optimizing geometric and physical parameters.; EI; 0; 1; 120-125; 26
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/407633]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Tian, Yu,Huang, Ru. AC Performance analysis and structure optimization of ultra-thin body SOI MOSFET's[J]. pan tao ti hsueh paochinese journal of semiconductors,2005.
APA	Tian, Yu,&Huang, Ru.(2005).AC Performance analysis and structure optimization of ultra-thin body SOI MOSFET's.pan tao ti hsueh paochinese journal of semiconductors.
MLA	Tian, Yu,et al."AC Performance analysis and structure optimization of ultra-thin body SOI MOSFET's".pan tao ti hsueh paochinese journal of semiconductors (2005).