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	High performance SOI gate-bulk connected LDMOSFET for RF power amplifier application in short and medium range wireless communication systems
	Zhang, GY ; Sun, X ; Huang, R ; Zhang, X ; Wang, YY
	2003
英文摘要	A novel application of SOI gate-bulk connected (GBC) LDMOSFET for RF power amplifier in short and medium range wireless communication is proposed. This application allows the power transistor to give higher intrinsic gain, lower power consumption. boost driving current capability and increase breakdown voltage. The results show that the good performance of this novel application can be used in the design of RF transmitter.; Computer Science, Hardware & Architecture; Engineering, Manufacturing; Engineering, Electrical & Electronic; CPCI-S(ISTP); 0
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/406948]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Zhang, GY,Sun, X,Huang, R,et al. High performance SOI gate-bulk connected LDMOSFET for RF power amplifier application in short and medium range wireless communication systems. 2003-01-01.

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