QQ客服 官方微博 反馈留言

	An intensity testing model and examination of gold-silicon wafer bonding
	Wang, Xiang ; Wang, Wei ; He, Xuefeng ; Zhang, Dacheng
	2006
关键词	eutectic bonding gold-silicon strength test AU SURFACES AU/SI
英文摘要	A bonding intensity testing method, called Press-arm model, has been successfully designed and verified by Ansys finite element analysis. The gold-silicon bonding strength [sigma(2)] = 238 MPa has been measured by the Press-arm model. We can probably determine the [sigma(2)] value and compare the bonding strengths by the Press-arm length l. The model can also be used in other type of bonding. The bond region is sufficiently stronger than the silicon substrate. A substrate-Si/Cr/Au/poly-Si/Au and a silicon substrate is bonded at 380-450 degrees C. It occurs as soon as the dissolving of the SiO2 layer by silicidation of the Cr barrier layer. To avoid gold contamination to the silicon die, an excess annealing temperature (about 20 degrees C higher than Au-Si eutectic horizontal) is used. The bonding surface with brick pattern is in favor of Au-Si bonding.; Nanoscience & Nanotechnology; EI; CPCI-S(ISTP); 0
语种	英语
DOI标识	10.1142/S0219581X06005224
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/406695]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Wang, Xiang,Wang, Wei,He, Xuefeng,et al. An intensity testing model and examination of gold-silicon wafer bonding. 2006-01-01.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。