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	High aspect ratio etching of nanopores in PECVD SiC through AAO mask
	Wu, Songmei ; Bammatter, Marc-Oliver ; Tang, Wei ; Auzelyte, Vaida ; Zhang, Haixia ; Brugger, Juergen
	2013
关键词	nanopore PECVD SiC Nanopore AAO ANODIZED ALUMINUM PLASMA FABRICATION MEMBRANES SILICON ARRAY
英文摘要	We present in this work the fabrication of high aspect ratio nanopores in 500 nm PECVD SiC films through AAO (anodic aluminum oxide) mask. The initial AAO thin film is 180 nm thick and the diameter of nanopores is 33 +/- 7 nm. We have used three plasma chemistries: CF4, Cl-2 /Ar, and SF6/O-2 to study the pattern transfer process into SiC at sub-50 nm scale by deep reactive ion etching. CF4 and Cl-2/Ar etchings show highly anisotropic features. Vertical pores with similar diameter as the AAO mask (33 +/- 12 nm) and as deep as 400 nm (aspect ratio > 10) can be achieved by CF4 reactant. As comparison, SF6 /O-2 chemistry generates very different etching profiles, causing trenches both in vertical and lateral directions. Our PECVD SiC nanopores are promising candidates for robust biosensing and nanofiltration applications.; Engineering, Biomedical; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; EI; CPCI-S(ISTP); 0
语种	英语
DOI标识	10.1109/NEMS.2013.6559887
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/405795]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Wu, Songmei,Bammatter, Marc-Oliver,Tang, Wei,et al. High aspect ratio etching of nanopores in PECVD SiC through AAO mask. 2013-01-01.

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