A Gate-All-Around Tunneling Field-Effect Transistor with SiO2 Core and   Si Shell Structure

doi:10.1166/jctn.2014.3574

CORC > 北京大学 > 信息科学技术学院

	A Gate-All-Around Tunneling Field-Effect Transistor with SiO2 Core and Si Shell Structure
	He, Xiaomeng ; Shi, Min ; Wang, Cheng ; Zhu, Xiaoan ; Zhang, Xiangyu ; He, Jin ; He, Qingxing ; Du, Caixia ; Zhong, Shengju
刊名	journal of computational and theoretical nanoscience
	2014
关键词	Gate-All-Around (GAA) Nanowire Core-Shell Tunnling Field-Effect Transistor (TFET) Band-to-Band Tunneling Quantum Confinement Effect SIMULATION FET
DOI	10.1166/jctn.2014.3574
英文摘要	This paper presents a new gate-all-around tunneling FET based on SiO2 core and Si shell structure (GAA-SOI-TFET). The 3-D numerical simulation demonstrates that this new device has steep subthreshold swing (<60 mV/dec) over several orders of magnitude of drain current, suppressed drain-induced barrier-lowering of similar to 46 mV/V and enhanced I-on/I-off ratio up to 10(9) orders of magnitude. It is found that I-on begins to increase when SiO2 core radius exceeds a specified value (similar to 4 nm) due to quantum confinement effect. By modulation of the SiO2 core radius and Si shell doping, an optimized manufacturing solution of this kind of the device is obtained.; Chemistry, Multidisciplinary; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter; SCI(E); EI; 0; ARTICLE; 8; 1826-1832; 11
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/389049]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	He, Xiaomeng,Shi, Min,Wang, Cheng,et al. A Gate-All-Around Tunneling Field-Effect Transistor with SiO2 Core and Si Shell Structure[J]. journal of computational and theoretical nanoscience,2014.
APA	He, Xiaomeng.,Shi, Min.,Wang, Cheng.,Zhu, Xiaoan.,Zhang, Xiangyu.,...&Zhong, Shengju.(2014).A Gate-All-Around Tunneling Field-Effect Transistor with SiO2 Core and Si Shell Structure.journal of computational and theoretical nanoscience.
MLA	He, Xiaomeng,et al."A Gate-All-Around Tunneling Field-Effect Transistor with SiO2 Core and Si Shell Structure".journal of computational and theoretical nanoscience (2014).