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	High performance unipolar AlOy/HfOx/Ni based RRAM compatible with Si diodes for 3D application
	Tran, X.A. ; Gao, B. ; Kang, J.F. ; Wu, L. ; Wang, Z.R. ; Fang, Z. ; Pey, K.L. ; Yeo, Y.C. ; Du, A.Y. ; Nguyen, B.Y. ; Li, M.F. ; Yu, H.Y.
	2011
英文摘要	We report a high performance unipolar RRAM with Ni-electrode/HfO x/AlOy/p+-Si structure, compatible with Si-diode selector for 3D cross-bar implementation. Highlights of the demonstrated RRAM include 1) a high on/off resistance ratio of ??10 5; 2) ??100% device yield on a 6-inch wafer; 3) excellent cycle-to-cycle and device-to-device uniformity of switching parameters (e.g. Vset, Vreset, and HRS/LRS currents); 4) satisfactory pulse switching endurance (> 106 cycles); 5) high temperature retention (>105 s @ 120??C), and high temperature operating stability (> 200??C) without threshold resistive switching; 6) a fast set/rest speed of ??10/30 ns; 7) full CMOS compatible materials and process: with p +-Si bottom electrode, avoiding the use of noble metals, e.g. Pt. ? 2011 JSAP (Japan Society of Applied Physi.; EI; 0
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/328749]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Tran, X.A.,Gao, B.,Kang, J.F.,et al. High performance unipolar AlOy/HfOx/Ni based RRAM compatible with Si diodes for 3D application. 2011-01-01.

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