QQ客服 官方微博 反馈留言

	Methods to protect silicon microstructures from the damages in deep reactive ion etching
	Ruan, Yong ; Ren, Tanling ; Liu, Litian ; Zhang, Dacheng
	2007
英文摘要	New methods for improving the quality of the silicon deep reactive ion etching (DRIE) procedure were investigated. It suggested that a PECVD oxide layer was deposited at the silicon sidewall and a thermal oxide layer was formed at the silicon backside. Due to the silicon to silicon oxide etching selectivity (120:1-125:1), these oxide layers could protect the silicon microstructures from the damages caused by the lag and footing effects usually occurred in the basic silicon-on-glass (SOG) process. SEM microscope result confirmed that the silicon structure could endure a long time overetch and the structure surface could remain intact by the modified processes. The gyroscope device test results also were in good agreement with new process methods. ?2007 IEEE.; EI; 0
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/327876]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Ruan, Yong,Ren, Tanling,Liu, Litian,et al. Methods to protect silicon microstructures from the damages in deep reactive ion etching. 2007-01-01.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。