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	High negative bias stability Gadolinium-doped Aluminum-Zinc-Oxide thin film transistors
	Dong, Junchen ; Han, Dedong ; Zhao, Feilong ; Zhao, Nannan ; Wu, Jing ; Chen, Zhuofa ; Cong, Yingying ; Zhang, Shengdong ; Zhang, Xing ; Liu, Lifeng ; Wang, Yi
	2014
英文摘要	Thin film transistors (TFTs) with Gadolinium-doped Aluminum-Zinc-Oxide (Gd-AZO) thin film as the active layer were fabricated on glass substrate at room temperature. Amorphous Gd-AZO crystal structure which is benefit for high performance devices was obtained. The variation trend of TFTs properties with O2 partial pressure was investigated. Excellent negative bias stress stability and transmittance Gd-AZO TFTs was realized, too. The ultimate TFT has excellent properties such as a saturation mobility of 238 cm2/V??s, an on-to-off current ratio of 6.08??108, a threshold of 1.92V, and a sub-threshold swing of 161 mV/decade. ? 2014 IEEE.; EI; 0
语种	英语
DOI标识	10.1109/ICSICT.2014.7021650
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/295554]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Dong, Junchen,Han, Dedong,Zhao, Feilong,et al. High negative bias stability Gadolinium-doped Aluminum-Zinc-Oxide thin film transistors. 2014-01-01.

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